Determination of the atomic mixing layer in sputter profiling of Ta/Si multilayers by TEM and AES
- 1 December 1990
- journal article
- research article
- Published by Wiley in Surface and Interface Analysis
- Vol. 15 (12) , 794-796
- https://doi.org/10.1002/sia.740151214
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Depth scale calibration during sputter removal of multilayer systems by SNMSAnalytical and Bioanalytical Chemistry, 1989
- Recent applications of secondary neutral mass spectrometry for quantitative analysis of homogeneous and structured samplesNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988
- Determination of depth resolution from measured sputtering profiles of multilayer structures: Equations and approximationsSurface and Interface Analysis, 1986
- Tiefenprofilanalysen und TEM-Querschnitte von Tantalsilicid-Polysilicium-DoppelschichtenAnalytical and Bioanalytical Chemistry, 1984
- The statistical sputtering contribution to resolution in concentration-depth profilesThin Solid Films, 1981
- Quantitative depth profiling in surface analysis: A reviewSurface and Interface Analysis, 1980
- Influence of atomic mixing and preferential sputtering on depth profiles and interfacesJournal of Vacuum Science and Technology, 1979
- The depth resolution of sputter profilingApplied Physics A, 1979