Growth of high-quality GaN by low-pressure metal-organic vapour phase epitaxy (LP-MOVPE) from 3D islands and lateral overgrowth
- 1 September 1999
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 205 (3) , 245-252
- https://doi.org/10.1016/s0022-0248(99)00299-7
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Present status of InGaN/GaN/AlGaN-based laser diodesJournal of Crystal Growth, 1998
- Influence of in situ sapphire surface preparation and carrier gas on the growth mode of GaN in MOVPEJournal of Crystal Growth, 1998
- Lateral epitaxial overgrowth of GaN films on SiO2 areas via metalorganic vapor phase epitaxyJournal of Electronic Materials, 1998
- Magnesium induced changes in the selective growth of GaN by metalorganic vapor phase epitaxyApplied Physics Letters, 1998
- Luminescence and reflectivity studies of undoped, n- and p-doped GaN on (0001) sapphireMaterials Science and Engineering: B, 1997
- Dislocation density reduction via lateral epitaxy in selectively grown GaN structuresApplied Physics Letters, 1997
- Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1997
- Morphological and Structural Transitions in GaN Films Grown on Sapphire by Metal-Organic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1996
- High dislocation densities in high efficiency GaN-based light-emitting diodesApplied Physics Letters, 1995
- GaN Growth Using GaN Buffer LayerJapanese Journal of Applied Physics, 1991