Lateral epitaxial overgrowth of GaN films on SiO2 areas via metalorganic vapor phase epitaxy
- 1 April 1998
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 27 (4) , 233-237
- https://doi.org/10.1007/s11664-998-0393-8
Abstract
No abstract availableKeywords
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