Parallel Electron Transport and Field Effects of Electron Distributions in Selectively-Doped GaAs/n-AlGaAs
- 1 April 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (4A) , L213
- https://doi.org/10.1143/jjap.22.l213
Abstract
It is demonstrated that a high electric field has large effects on the electron distribution and mobility in selectively doped GaAs/n-GaAs heterostructures. An increase of electron density in the AlGaAs layer has been found in the analysis of pulsed Hall effect and SdH oscillations at 4.2 K. At high fields, the mobility of two dimensional (2D) electrons has become slightly higher than the average mobility obtained by the pulsed Hall measurement. The velocity of 2D electrons reaches 3.8×107 cm/s at 4.2 K.Keywords
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