Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance
- 1 April 2004
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 43 (4S)
- https://doi.org/10.1143/jjap.43.2255
Abstract
We fabricated non-recessed-gate enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) with a gate length L g of 120 nm. As gate metals, Ni/Pt/Au and Mo/Pt/Au were used. The Ni/Pt/Au-gate HEMTs with rapid thermal annealing (RTA) at 500°C were normally-off at a gate-source voltage V gs of 0 V, indicating E-mode operation. Moreover, the Mo/Pt/Au-gate HEMTs also showed E-mode device operation without RTA. The fabricated E-mode HEMTs with both gate metals showed high RF performance. We obtained a cutoff frequency f T of more than 50 GHz and a maximum oscillation frequency f max of approximately 100 GHz.Keywords
This publication has 11 references indexed in Scilit:
- Fabrication of sub‐50‐nm‐gate i‐AlGaN/GaN HEMTs on sapphirephysica status solidi (c), 2003
- Fabrication Technology and Device Performance of Sub-50-nm-Gate InP-Based High Electron Mobility TransistorsJapanese Journal of Applied Physics, 2002
- Power electronics on InAlN/(In)GaN: Prospect for a record performanceIEEE Electron Device Letters, 2001
- Ultra-short 25-nm-gate lattice-matched InAlAs/InGaAs HEMTs within the range of 400 GHz cutoff frequencyIEEE Electron Device Letters, 2001
- GaN/AlGaN high electron mobility transistors withf τ of 110 GHzElectronics Letters, 2000
- Polarization effects in nitride semiconductor device structures and performance of modulation doped field effect transistorsSolid-State Electronics, 1999
- Novel high-yield trilayer resist process for 0.1 μm T-gate fabricationJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- A new method for determining the FET small-signal equivalent circuitIEEE Transactions on Microwave Theory and Techniques, 1988
- Enhancement-Mode High Electron Mobility Transistors for Logic ApplicationsJapanese Journal of Applied Physics, 1981
- A modified forward I-V plot for Schottky diodes with high series resistanceJournal of Applied Physics, 1979