The chemical polishing of semiconductors
- 1 February 1975
- journal article
- review article
- Published by Springer Nature in Journal of Materials Science
- Vol. 10 (2) , 321-339
- https://doi.org/10.1007/bf00540357
Abstract
No abstract availableKeywords
This publication has 83 references indexed in Scilit:
- Chemical etching of {1 1 1} and {1 0 0} surfaces of InPJournal of Materials Science, 1973
- A Rutherford scattering study of the chemical composition of native oxides on GaPJournal of Physics and Chemistry of Solids, 1973
- Preliminary Results on the Oxidation of GaAs and GaP during Chemical EtchingJournal of the Electrochemical Society, 1971
- Etching of Gallium Arsenide with Nitric AcidJournal of the Electrochemical Society, 1964
- Characteristics of the {111} Surfaces of the III–V Irttermetallic CompoundsJournal of the Electrochemical Society, 1961
- Photoetching and Plating of Gallium ArsenideJournal of the Electrochemical Society, 1961
- Photosensitive Etching of SiliconJournal of the Electrochemical Society, 1961
- On the Mechanism of Chemically Etching Germanium and SiliconJournal of the Electrochemical Society, 1960
- Lamellar Defects in Single Crystals of SiliconProceedings of the Physical Society. Section B, 1955
- LXXXVII. Theory of dislocations in germaniumJournal of Computers in Education, 1954