Ostwald ripening of Ge precipitates elaborated by ion implantation in SiO2
- 1 January 2000
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 69-70, 380-385
- https://doi.org/10.1016/s0921-5107(99)00411-0
Abstract
No abstract availableKeywords
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