Energy level of the nitrogen dangling bond in amorphous silicon nitride
- 30 September 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (14) , 1699-1701
- https://doi.org/10.1063/1.106222
Abstract
The composition dependence and room‐temperature metastability of the paramagnetic nitrogen dangling‐bond center is amorphous silicon nitride suggest that its energy level lies close to the N pπ states, in agreement with theoretical calculations.Keywords
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