Investigation of the light-induced effects in nitrogen-rich silicon nitride films
- 11 September 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (11) , 1112-1114
- https://doi.org/10.1063/1.101673
Abstract
We report the first observations of photoconductivity fatigue and generation of positive fixed charges under ultraviolet illumination in gate-quality nitrogen-rich silicon nitride films, using metal-nitride-silicon and metal-nitride-oxide-silicon structures. The photoconductivity fatigue is correlated with the density of neutral silicon dangling bonds measured by electron spin resonance. Spins and positive fixed charges are generated at the same time, but a different rates and in a different amount. Possible models are discussed to explain the observed results.Keywords
This publication has 12 references indexed in Scilit:
- Electrically active point defects in amorphous silicon nitride: An illumination and charge injection studyJournal of Applied Physics, 1988
- Electron-spin-resonance study of defects in plasma-enhanced chemical vapor deposited silicon nitrideApplied Physics Letters, 1988
- Stable photoinduced paramagnetic defects in hydrogenated amorphous silicon nitrideApplied Physics Letters, 1987
- The electronic properties of plasma-deposited films of hydrogenated amorphous SiNx (0<x<1.2)Journal of Applied Physics, 1986
- Light-induced metastable defects in hydrogenated amorphous silicon: A systematic studyPhysical Review B, 1985
- Photo-Induced ESR in Amorphous Si1-xNx:H FilmsJapanese Journal of Applied Physics, 1984
- Light-induced dangling bonds in hydrogenated amorphous siliconApplied Physics Letters, 1981
- Reversible conductivity changes in discharge-produced amorphous SiApplied Physics Letters, 1977
- Conduction Studies in Silicon Nitride: Dark Currents and PhotocurrentsIBM Journal of Research and Development, 1977
- Optically induced metastable paramagnetic states in amorphous semiconductorsPhysical Review B, 1977