Electrical characterization of textured interpoly capacitors for advanced stacked DRAMs
- 4 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 663-666
- https://doi.org/10.1109/iedm.1990.237112
Abstract
The authors present and discuss the C-V, I-V and TDDB (time-dependent dielectric breakdown) characteristics of textured interpoly capacitors fabricated with different process conditions. It is concluded that the combination of a rough storage electrode with a dielectric that has a bulk-limited conduction offers a considerable increase in capacitance while improving device reliability. Textured stacked capacitors (TSTCs) are proposed for the manufacture of 64-Mb DRAMs. Compared to other advanced stacked capacitor concepts, the approach drastically reduces process complexity and topography.Keywords
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