CdTe/HgCdTe indium-diffused photodiodes
- 1 November 1982
- journal article
- Published by Elsevier in Infrared Physics
- Vol. 22 (6) , 331-336
- https://doi.org/10.1016/0020-0891(82)90004-5
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Molecular beam epitaxial growth of high structural perfection, heteroepitaxial CdTe films on InSb (001)Applied Physics Letters, 1981
- Experimental determination of minority-carrier lifetime and recombination mechanisms in p-type Hg1−xCdxTeJournal of Applied Physics, 1981
- HgCdTe photodiodes formed by double-layer liquid phase epitaxial growthApplied Physics Letters, 1980
- Properties of ion-implanted junctions in mercury—cadmium—tellurideIEEE Transactions on Electron Devices, 1980
- IV-VI semiconductor lateral-collection photodiodesApplied Physics Letters, 1978
- The influence of geometry on the interpretation of the current in epitaxial diodesSolid-State Electronics, 1976
- Epitaxial CdxHg1−xTe photovoltaic detectorsInfrared Physics, 1976
- Advances in Hg implanted Hg1−xCdxTe photovoltaic detectorsInfrared Physics, 1975
- Intrinsic Carrier Concentration of Hg1−xCdxTe as a Function of x and T Using k·p CalculationsJournal of Applied Physics, 1970
- Temperature and Alloy Compositional Dependences of the Energy Gap of Hg1−xCdxTeJournal of Applied Physics, 1969