The adsorption site of oxygen on Si(100) determined by sexafs
- 2 October 1987
- journal article
- Published by Elsevier in Surface Science
- Vol. 189-190, 453-458
- https://doi.org/10.1016/s0039-6028(87)80467-3
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Performance of the flipper monochromator at the wiggler/undulator at HASYLABNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1986
- Orientation dependent adsorption on a cylindrical silicon crystal: II. OxygenSurface Science, 1985
- Initial stages of oxidation of Si{100}(2 × 1): A combined vibrational (EELS) and electron binding energy (XPS) studySurface Science, 1985
- Chemisorption of Atomic Oxygen on Si(100): Self-Consistent Cluster and Slab Model InvestigationsPhysical Review Letters, 1984
- Multiple-bonding configurations for oxygen on silicon surfacesPhysical Review B, 1983
- Vibrational study of the initial stages of the oxidation of Si(111) and Si(100) surfacesApplied Physics A, 1982
- Atomic and Electronic Structures of Reconstructed Si(100) SurfacesPhysical Review Letters, 1979