Sputtering during ion implantation into gallium arsenide
- 1 May 1975
- journal article
- research article
- Published by Springer Nature in Applied Physics B Laser and Optics
- Vol. 7 (1) , 39-44
- https://doi.org/10.1007/bf00900518
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- The mechanism of simultaneous implantation and sputtering by high energy oxygen ions during secondary ion mass spectrometry (SIMS) analysisSurface Science, 1974
- Electron-beam penetration in GaAsJournal of Applied Physics, 1973
- Implantation profiles modified by sputteringRadiation Effects, 1973
- The Retention of Bi Ions Implanted in GaAsPublished by Springer Nature ,1971
- Sputtering and Strain of Silicon by Ion ImplantationJournal of Applied Physics, 1971
- Ion Sorption in the Presence of SputteringProceedings of the Physical Society, 1962