Neutron-transmutation doping of GaAs — as studied by ESR
- 31 October 1982
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 44 (2) , 285-286
- https://doi.org/10.1016/0038-1098(82)90450-1
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Electron spin resonance of AsGa antisite defects in fast neutron-irradiated GaAsApplied Physics Letters, 1982
- The observation of high concentrations of arsenic anti-site defects in electron irradiated n-type GaAs by X-band EPRSolid State Communications, 1981
- Spin-lattice relaxation of116In in InP and InSb in the presence of (n, ?)-induced point defectsHyperfine Interactions, 1981
- Doping of semi-insulating and n-type GaAs by neutron transmutationJournal of Applied Physics, 1980
- Transmutation doping of GaAs by thermal neutronsSolid State Communications, 1979