Characterization of the Substrate Interface of Excimer Laser Crystallized Polycrystalline Silicon Thin Films
- 1 January 1994
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Large Grain Creation and Destruction in Excimer Laser Crystallized Amorphous SiliconMRS Proceedings, 1993
- Multiple Pulse Irradiation Effects in Excimer Laser-Induced Crystallization of Amorphous Si FilmsMRS Proceedings, 1993
- Pulsed-Laser Annealing of Silicon FilmsMRS Proceedings, 1992
- Pulsed Laser Crystallization of Amorphous Silicon Films: Effects of Substrate Temperature and Laser Shot DensityMRS Proceedings, 1992
- Excimer Laser Crystallized Amorphous Silicon Films: Effects of Shot Density and Substrate TemperatureMRS Proceedings, 1991
- Excimer-laser-induced crystallization of hydrogenated amorphous siliconApplied Physics Letters, 1990
- Low temperature crystallization of amorphous silicon using an excimer laserJournal of Electronic Materials, 1990
- Fast-Pulse Excimer-Laser-Induced Processes in a-Si:HMRS Proceedings, 1989
- Low Temperature Crystallization of Amorphous Silicon Films Using an Excimer LaserMRS Proceedings, 1989
- XeCl Excimer Laser Annealing Used to Fabricate Poly-Si TftsMRS Proceedings, 1986