Infrared rapid annealing of Zn-implanted GaAs

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Abstract
Infrared rapid annealing was used to activate Zn which had been heavily implanted into GaAs substrate at a variety of annealing temperatures, temperature hold times, and heating rates. With no capping insulator and no As vapor pressure, an activation efficiency over 90% was obtained by annealing at 800 °C with zero hold time. It was found that prolonging the temperature hold time and slowing down the heating rate reduced the activation efficiency. In-depth profiles of holes and atomic Zn in the annealed samples were analyzed by differential Hall measurement and secondary ion mass spectroscopy, respectively. Both profiles have double peaks, implying depletion of Zn atoms around Rp. Measurement of backscattering yield revealed that crystallographic recovery of implantation-induced damage is more rapid at higher heating rate.

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