Leakage mechanism in GaN and AlGaN Schottky interfaces
- 14 June 2004
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 84 (24) , 4884-4886
- https://doi.org/10.1063/1.1762980
Abstract
Based on detailed temperature-dependent current–voltage (I–V–T) measurements the mechanism of leakage currents through GaN and AlGaN Schottky interfaces is discussed. The experiments were compared to calculations based on thin surface barrier model in which the effects of surface defects were taken into account. Our simulation method reproduced the experimental I–V–T characteristics of the GaN and AlGaN Schottky diodes, and gave excellent fitting results to the reported Schottky I–V curves in GaN for both forward and reverse biases at different temperatures. The present results indicate that the barrier thinning caused by unintentional surface-defect donors enhances the tunneling transport processes, leading to large leakage currents through GaN and AlGaN Schottky interfacesKeywords
This publication has 15 references indexed in Scilit:
- Mechanism of the reverse gate leakage in AlGaN/GaN high electron mobility transistorsApplied Physics Letters, 2003
- Large Gate Leakage Current in AlGaN/GaN High Electron Mobility TransistorsJapanese Journal of Applied Physics, 2002
- Mechanism of anomalous current transport in n-type GaN Schottky contactsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2002
- Mechanism of current leakage through metal/n-GaN interfacesApplied Surface Science, 2002
- Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistorsJournal of Applied Physics, 2000
- Electrical properties of metal/GaN and SiO2/GaN interfaces and effects of thermal annealingApplied Surface Science, 2000
- Effects of interfacial oxides on Schottky barrier contacts to n- and p-type GaNApplied Physics Letters, 1999
- The role of the tunneling component in the current–voltage characteristics of metal-GaN Schottky diodesJournal of Applied Physics, 1998
- Metal contacts to n-type GaNJournal of Electronic Materials, 1998
- Current transport mechanisms in GaN-based metal–semiconductor–metal photodetectorsApplied Physics Letters, 1998