A shallow state in molecular beam epitaxial grown CuGaSe2 film detectable by 1.62 eV photoluminescence
- 15 March 1997
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 81 (6) , 2794-2798
- https://doi.org/10.1063/1.363936
Abstract
Cu-rich CuGaSe2 films grown on [001] oriented GaAs substrates by molecular beam epitaxy show a remarkable low temperature photoluminescence emission peaked at 1.620 eV. This emission can be attributed to a free-to-bound recombination accompanying a donor-to-acceptor pair recombination. The ionization energies of these states are found to be 3.4 and 108 meV, respectively, via temperature dependent photoluminescence. The 108 meV state is attributed to a donor and the 3.4 meV state to an acceptor state observed.This publication has 11 references indexed in Scilit:
- Band-edge photoluminescence of CuGaSe2 films grown by molecular beam epitaxyJournal of Applied Physics, 1996
- Growth of CuGaSe2 film by molecular beam epitaxyMicroelectronics Journal, 1996
- Lattice defects in I-III-VI2 compoundsJournal of Physics and Chemistry of Solids, 1986
- Electronic structure of the ternary chalcopyrite semiconductors CuAl, CuGa, CuIn, CuAl, CuGa, and CuInPhysical Review B, 1983
- The role of impurities in refined ZnSe and other II–VI semiconductorsJournal of Crystal Growth, 1982
- Edge emission of CuGaSe2Journal of Applied Physics, 1980
- Electrical and optical properties of CuGaSe2Solar Energy Materials, 1979
- Photoluminescence Properties of CuGaSe2Grown by Iodine Vapour TransportJapanese Journal of Applied Physics, 1978
- Pair Spectra and the Shallow Acceptors in ZnSePhysical Review B, 1973
- Optical absorption and recombination radiation in semiconductors due to transitions between hydrogen-like acceptor impurity levels and the conduction bandJournal of Physics and Chemistry of Solids, 1960