10000 h, 30–50 mW CW operation of 670–690nm visible laser diodes
- 4 August 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (16) , 1293-1294
- https://doi.org/10.1049/el:19940912
Abstract
The reliability of high-power AlGaInP red laser diodes with strained DQW (double quantum well) active layer and an MQB (multiquantum barrier) has been investigated. For the non-window 690 nm lasers and the 670 nm window lasers 10000 h CW operation under the conditions of 60°C, 30 mW and 30°C, 50 mW, respectively, was realised.Keywords
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