Radiation Effects in Semiconductors
- 1 January 1967
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 37 references indexed in Scilit:
- Determination of the Mean Size of Disordered Regions Induced in Germanium by Fast‐Neutron Bombardment at Low TemperatureJournal of Applied Physics, 1965
- DIRECT OBSERVATION OF NEUTRON DAMAGE IN GERMANIUMApplied Physics Letters, 1962
- Silicon Divacancy and its Direct Production by Electron IrradiationPhysical Review Letters, 1961
- Drift Mobility in Neutron Irradiated n-Type GermaniumJournal of Applied Physics, 1960
- Transitory Electrical Properties of n-Type Germanium After a Neutron PulseJournal of Applied Physics, 1960
- Low-Temperature Annealing Studies in GeJournal of Applied Physics, 1959
- Nature of Bombardment Damage and Energy Levels in SemiconductorsJournal of Applied Physics, 1959
- Disordered Regions in Semiconductors Bombarded by Fast NeutronsJournal of Applied Physics, 1959
- Thermal and Radiation Annealing of GePhysical Review Letters, 1959
- Hall Effect and Conductivity in Porous MediaJournal of Applied Physics, 1956