V-shaped defects in InGaN/GaN multiquantum wells
- 1 October 1999
- journal article
- Published by Elsevier in Materials Letters
- Vol. 41 (2) , 67-71
- https://doi.org/10.1016/s0167-577x(99)00105-6
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Formation of V-shaped pits in InGaN/GaN multiquantum wells and bulk InGaN filmsApplied Physics Letters, 1998
- Interdiffusion of In and Ga in InGaN quantum wellsApplied Physics Letters, 1998
- Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wellsApplied Physics Letters, 1998
- In incorporation efficiency and composition fluctuations in MOVPE grown GaInN/GaN hetero structures and quantum wellsMaterials Science and Engineering: B, 1997
- Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wellsApplied Physics Letters, 1997
- Quantum shift of band-edge stimulated emission in InGaN–GaN multiple quantum well light-emitting diodesApplied Physics Letters, 1997
- Luminescences from localized states in InGaN epilayersApplied Physics Letters, 1997
- Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nmApplied Physics Letters, 1997
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well StructuresJapanese Journal of Applied Physics, 1995