In incorporation efficiency and composition fluctuations in MOVPE grown GaInN/GaN hetero structures and quantum wells
- 18 December 1997
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 50 (1-3) , 238-244
- https://doi.org/10.1016/s0921-5107(97)00184-0
Abstract
No abstract availableKeywords
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