Gold, self-, and dopant diffusion in silicon

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Abstract
The problem of the mechanism controlling gold diffusion in silicon has been reexamined carefully by solving the full system of equations, taking into account the various couplings between the impurity and the point defects. It is concluded that the Frank-Turnbull mechanism does not allow a good description of the bulk Au profiles for diffusion from the two faces of thin Si samples. The kickout mechanism alone allows for an accurate description of the bulk behavior, but the contribution of the two interchange mechanisms must be taken into account to describe the surface profiles. From the analysis of both Au and dopant diffusion in a consistent way, parameters controlling the behavior of the native point defects have been determined.