Electronic structures of In1−xGaxAs-InP strained-layer quantum wells
- 15 April 1989
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (8) , 3096-3100
- https://doi.org/10.1063/1.342705
Abstract
The band structures of In1−xGaxAs‐InP strained‐layer quantum wells are investigated theoretically in the bond‐orbital model. For small x, the well material is subject to a compressive biaxial strain which lifts the HH1 subband further apart from the LH1 subband, resulting in smaller in‐plane effective mass for holes. For large x, the strain becomes tensile and the LH1 subband is lifted upward with respect to the HHl subband. For x near the critical value, where the HHl and LHl energy levels cross each other, the valence‐band structure undergoes a direct‐to‐indirect transition.This publication has 19 references indexed in Scilit:
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