First Room-Temperature Continuous-Wave Operation of Self-Formed InGaAs Quantum Dot-Like Laser on Si substrate Grown by Metalorganic Chemical Vapor Deposition

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Abstract
The first room-temperature continuous-wave operation of a self-formed InGaAs quantum dot-like laser on a Si substrate fabricated by metalorganic chemical vapor deposition at atmospheric pressure is reported. This laser exhibits a threshold current density of 1.32 kA/cm2 and a lasing wavelength of 854 nm with a spectral width of 1.6 nm. A significant improvement in the reliability has been found due to the quantum dot-like active region in the laser which reduces the dislocation numbers and hence provides a laser with a long lifetime.