Application of thin silicon films to closed-tube Si and Zn diffusion in GaAs and AlxGa1−xAs

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Abstract
The application of thin Si films for selective area Si and Zn diffusion into GaAs and AlGaAs is described in detail. The concentration‐dependent pair diffusion coefficient and the activation energy for Si diffusion into AlxGa1−xAs under As overpressure for 0≤x≤0.8 are measured using both secondary ion mass spectrometry and junction depth studies. Furthermore, Si films are seen to act as an ideal mask for Zn diffusion at temperatures below 750 °C. Ideal lateral Zn diffusion profiles are routinely observed using these films, independent of stress at the interface which provides new insight into the nature of laterally enhanced diffusion.