Photoenhanced chemical vapor deposition of zinc phosphide

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Abstract
Thin films of zinc, phosphorus, and zinc phosphide (Zn3P2) have been deposited by photodissociation of dimethylzinc (DMZ) and phosphine (PH3) on various substrates using a low-pressure mercury lamp as a light source. The substrate temperature was varied between room temperature and 250 °C. The deposition rates of the films were significantly affected by the UV light intensity, the density of gases, the PH3/DMZ molar ratio, and the substrate temperature. Zn3P2 microcrystallites were grown on Si(111) substrates at a temperature of 250 °C. Those crystallites were studied by using a scanning electron microscope and reflection high-energy electron diffraction. A very weak photoluminescence spectrum at 808 nm (1.53 eV) was observed at room temperature.

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