Effect of Impurity Segregation on the Electrical Properties of Grain Boundaries in Polycrystalline Silicon
- 1 January 1989
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Physical Chemistry of, in and on SiliconPublished by Springer Nature ,1989
- Determination of grain boundary impurity effects in polycrystalline siliconJournal of Vacuum Science & Technology A, 1984
- Recombination mechanisms and doping density in siliconJournal of Applied Physics, 1983
- Segregation of Impurities at Grain Boundaries and Other Compositional Inhomogeneities in Chill-Casted Silicon IngotsPublished by Springer Nature ,1982
- Dopant segregation in polycrystalline siliconJournal of Applied Physics, 1980
- Transport properties of polycrystalline silicon filmsJournal of Applied Physics, 1978
- Zero-bias resistance of grain boundaries in neutron-transmutation-doped polycrystalline siliconJournal of Applied Physics, 1978
- The electrical properties of polycrystalline silicon filmsJournal of Applied Physics, 1975
- Resistivity of Doped Polycrystalline Silicon FilmsJournal of the Electrochemical Society, 1973
- Chemical Vapor Deposited Polycrystalline SiliconJournal of the Electrochemical Society, 1972