The DX Center: Evidence for Charge Capture Via an Excited Intermediate State

This publication has 30 references indexed in Scilit:

• The Local-Environment-Dependent DX Centers: Evidence for the Single Energy Level with a Specified Configuration
  Japanese Journal of Applied Physics, 1989
• Large- versus small-lattice-relaxation models of theDXcenters inGa1−xAlxAs
  Physical Review B, 1988
• Fine structure of the alloy-broadened thermal emission spectra from D X centers in GaAlAs
  Applied Physics Letters, 1988
• The capture barrier of the D X center in Si-doped AlxGa1−xAs
  Journal of Applied Physics, 1987
• Investigation of theDXcenter in heavily dopedn-GaAs
  Physical Review Letters, 1987
• Mechanism of compensation in heavily silicon-doped gallium arsenide grown by molecular beam epitaxy
  Applied Physics Letters, 1987
• A new model of deep donor centres in Al_xGa_1-xAs
  Semiconductor Science and Technology, 1987
• Observation of the Persistent Photoconductivity Due to the DX Center in GaAs under Hydrostatic Pressure
  Japanese Journal of Applied Physics, 1985
• Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy System
  Japanese Journal of Applied Physics, 1985
• Trapping characteristics and a donor-complex ($\mathrm{DX}$) model for the persistent-photoconductivity trapping center in Te-doped ${\mathrm{Al}}_x{\mathrm{Ga}}_{1-x}\mathrm{As}$
  Physical Review B, 1979