Molecular cluster studies of defects in tetrahedral lattices: Dangling bonds reconstruction at the core of a 90° partial dislocation in diamond
- 31 January 1988
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 65 (4) , 245-250
- https://doi.org/10.1016/0038-1098(88)90779-x
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- Dislocations in semiconductorsMaterials Science and Technology, 1985
- Line defects in silicon: The 90° partial dislocationPhysical Review B, 1984
- Core structure and electronic bands of the 90° partial dislocation in siliconPhilosophical Magazine Part B, 1984
- The stacking-fault energy in diamondPhilosophical Magazine A, 1983
- 30° Partial Dislocations in Silicon: Absence of Electrically Active StatesPhysical Review Letters, 1982
- A valence force field for the silicon crystalJournal of Physics C: Solid State Physics, 1982
- Electronic structure of the unreconstructed 30° partial dislocation in siliconPhysical Review B, 1981
- On the Core Structure of the Glide‐Set 90° and 30° Partial Dislocations in SiliconPhysica Status Solidi (b), 1980
- The Structure And Electrical Properties Of Dislocations In SemiconductorsJournal of Microscopy, 1980
- Electron states associated with partial dislocations in siliconPhysica Status Solidi (b), 1979