Uniaxial stress effects and excited states for multiple bound excitons
- 30 November 1977
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 24 (5) , 383-386
- https://doi.org/10.1016/0038-1098(77)90987-5
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Excited states of donor bound excitons and bound multiexciton complexes in siliconSolid State Communications, 1977
- A new model for bound multiexciton complexesSolid State Communications, 1977
- Fine Structure of the Luminescence from Excitons and Multiexciton Complexes Bound to Acceptors in SiPhysical Review Letters, 1977
- Donor Exciton Satellites in Cubic Silicon Carbide: Multiple Bound Excitons RevisitedPhysical Review Letters, 1976
- Magnetic Field and Stress-Induced Splitting of the Novel Sharp Emission Line Series in Silicon Associated with P, Li, or B: No Bound Multiple-Exciton ComplexesPhysical Review Letters, 1976
- Observation of bound multiple-excitons in germaniumSolid State Communications, 1974
- New photoluminescence line-series spectra attributed to decay of multiexciton complexes bound to Li, B, and P centers in SiPhysical Review B, 1974
- Evidence for Bound Multiple-Exciton Complexes in SiliconPhysical Review Letters, 1973
- Raman Scattering and Photoluminescence in Boron-Doped and Arsenic-Doped SiliconPhysical Review B, 1973
- Magneto-Optical Properties and Recombination Rate of the Green Luminescence in Cubic SiCPhysical Review B, 1970