Excited states of donor bound excitons and bound multiexciton complexes in silicon
- 31 March 1977
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 21 (10) , 937-939
- https://doi.org/10.1016/0038-1098(77)90894-8
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Donor Exciton Satellites in Cubic Silicon Carbide: Multiple Bound Excitons RevisitedPhysical Review Letters, 1976
- Phonon broadening of bound exciton luminescence in siliconCanadian Journal of Physics, 1976
- Magnetic Field and Stress-Induced Splitting of the Novel Sharp Emission Line Series in Silicon Associated with P, Li, or B: No Bound Multiple-Exciton ComplexesPhysical Review Letters, 1976
- Observation of free-exciton two-electron transitions in wavelength-derivative absorption spectra of impurity-doped siliconPhysical Review B, 1975
- New photoluminescence line-series spectra attributed to decay of multiexciton complexes bound to Li, B, and P centers in SiPhysical Review B, 1974
- Evidence for Bound Multiple-Exciton Complexes in SiliconPhysical Review Letters, 1973
- New Radiative Recombination Processes Involving Neutral Donors and Acceptors in Silicon and GermaniumPhysical Review B, 1967
- Excitation Spectra of Lithium Donors in Silicon and GermaniumPhysical Review B, 1965