Near- 1.3-µm High-Intensity Photoluminescence at Room Temperature by InAs/GaAs Multi-Coupled Quantum Dots
- 1 April 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (4A) , L405
- https://doi.org/10.1143/jjap.34.l405
Abstract
We propose a new quantum dot system called multi-coupled quantum dots. In this system, since quantum dots couple with adjacent dots, the photoexcited carriers tunnel into the larger quantum dots which have lower energy states. This energy relaxation results in narrower and stronger photoluminescence than with conventional quantum dots. InAs/GaAs self-organized multi-coupled quantum dots show strong photoluminescence near 1.3 µ m at room temperature, whose intensity is as large as in the well-known highly efficient InGaAs/GaAs quantum wells.Keywords
This publication has 13 references indexed in Scilit:
- Self-Formed In0.5Ga0.5As Quantum Dots on GaAs Substrates Emitting at 1.3 µmJapanese Journal of Applied Physics, 1994
- Selective excitation of the photoluminescence and the energy levels of ultrasmall InGaAs/GaAs quantum dotsApplied Physics Letters, 1994
- Self-organized growth of strained InGaAs quantum disksNature, 1994
- 160°C CW operation of InGaAs/GaAs verticalcavitysurface emitting lasersElectronics Letters, 1994
- Self-organized growth of regular nanometer-scale InAs dots on GaAsApplied Physics Letters, 1994
- Differences in Tunneling Time between 77 K and Room Temperature for Tunneling Biquantum WellsJapanese Journal of Applied Physics, 1992
- Intrinsic mechanism for the poor luminescence properties of quantum-box systemsPhysical Review B, 1991
- Longitudinal-optical-phonon assisted tunneling in tunneling bi-quantum well structuresApplied Physics Letters, 1991
- Phonon scattering and energy relaxation in two-, one-, and zero-dimensional electron gasesPhysical Review B, 1990
- Optical properties of some III–V strained-layer superlatticesSuperlattices and Microstructures, 1989