UV Laser-Initiated Formation of Si3N4
- 1 January 1982
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Hydrogen content of a variety of plasma-deposited silicon nitridesJournal of Applied Physics, 1982
- Laser-induced chemical vapor deposition of SiO2Applied Physics Letters, 1982
- Low-temperature growth of polycrystalline Si and Ge films by ultraviolet laser photodissociation of silane and germaneApplied Physics Letters, 1982
- Low temperature photo-CVD oxide processing for semiconductor device applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1981
- ArF laser photodissociation of NH3 at 193 nm: internal energy distributions in NH2 X̃2B1 and Ã2A1, and two-photon generatin of NH A 3Π and b 1Σ+Chemical Physics, 1979
- Comparison of properties of dielectric films deposited by various methodsJournal of Vacuum Science and Technology, 1977
- A Review of infrared spectroscopic studies of vapor-deposited dielectric glass films on siliconJournal of Electronic Materials, 1976
- The silicon-silicon dioxide systemProceedings of the IEEE, 1969