High temperature operation of InGaAsP/InP heterostructure lasers and integrated back facet monitors fabricated by chemically assisted ion beam etching
- 17 May 1993
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (20) , 2486-2488
- https://doi.org/10.1063/1.109327
Abstract
Chemically assisted ion beam etching (CAIBE) has been used to etch InGaAsP/InP ridge laser facets. Smooth, vertical facets 4 μm deep have been etched using Ar/Cl2 CAIBE with a beam voltage of 440 V and a beam current density of 0.08 mA/cm2. Room temperature and high temperature (85 °C) L‐I characteristics and device performance have been evaluated, as well as the performance of integrated back facet monitors. Output powers of 9.5 mW from the laser and a monitor current of 3.75 mA have been obtained.Keywords
This publication has 11 references indexed in Scilit:
- Dry-etching techniques and chemistries for III–V semiconductorsMaterials Science and Engineering: B, 1991
- Full-wafer technology for large-scale laser processing and testingJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- InGaAsP/InP Lasers with Two Reactive-Ion-Etched Mirror FacetsJapanese Journal of Applied Physics, 1989
- High-performance InGaAsP/InP 1.3 μm laser structures with both facets etchedElectronics Letters, 1986
- Low threshold GaAs/GaAlAs BH lasers with ion-beam-etched mirrorsElectronics Letters, 1985
- Monolithic integration of a laser diode, photo monitor, and electric circuits on a semi-insulating GaAs substrateApplied Optics, 1984
- Continuous operation of monolithic dynamic-single-mode coupled-cavity lasersApplied Physics Letters, 1984
- CW operation of 1.5 μm GaInAsP/InP buried-heterostructure laser with a reactive-ion-etched facetElectronics Letters, 1983
- GaInAsP/InP stripe-geometry laser with a reactive-ion-etched facetApplied Physics Letters, 1980
- GaInAsP/InP laser with monolithically integrated monitoring detectorElectronics Letters, 1980