Novel self-aligned polysilicon-gate MOSFETs with polysilicon source and drain
- 31 October 1987
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 30 (10) , 1053-1062
- https://doi.org/10.1016/0038-1101(87)90099-2
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- CMOS — The emerging VLSI technologyIEEE Circuits and Devices Magazine, 1986
- Dependence of the work-function difference between the polysilicon gate and silicon substrate on the doping level in polysiliconIEEE Transactions on Electron Devices, 1985
- A new MOSFET structure with self-aligned polysilicon source and drain electrodesIEEE Electron Device Letters, 1984
- Effectiveness of polycrystalline silicon diffusion sourcesApplied Physics Letters, 1983
- Submicrometer MOSFET structure for minimizing hot-carrier generationIEEE Transactions on Electron Devices, 1982
- Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion—I. TheorySolid-State Electronics, 1974