Laser annealing of Bi-implanted ZnTe
- 1 April 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (7) , 542-544
- https://doi.org/10.1063/1.91573
Abstract
Bismuth‐implanted zinc telluride has been annealed by high‐power ruby laser pulses. Owing to its band gap (2.28 eV) the crystalline ZnTe is transparent to the ruby radiation while the implanted material is absorbing, leading to selective annealing. Channeling and reflectivity measurements indicate a progressive reordering with increasing energy density.Keywords
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