Gas Source Silicon Molecular Beam Epitaxy
- 1 January 1991
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 35 references indexed in Scilit:
- Adsorption of phosphorus on Si(111): Structure and chemical reactivityPhysical Review B, 1991
- Two reaction channels directly observed for atomic hydrogen on the Si(111)-7×7 surfacePhysical Review B, 1991
- The adsorption of hydrogen, digermane, and disilane on Ge(111): a multiple internal reflection infrared spectroscopy studyJournal of Electron Spectroscopy and Related Phenomena, 1990
- Etching characteristics of Si1−xGex alloy in ammoniac wet cleaningApplied Physics Letters, 1990
- Decomposition of silane on Si(111)-(7×7) and Si(100)-(2×1) surfaces below 500 °CThe Journal of Chemical Physics, 1990
- Interaction ofwith a Si(111)-77 surfacePhysical Review B, 1989
- Thermal and electron-beam-induced reaction of disilane on Si(100)-(2×1)Physical Review B, 1988
- Migration-Enhanced Epitaxy of GaAs and AlGaAsJapanese Journal of Applied Physics, 1988
- Observation of alternating reconstructions of silicon (001) 2×1 and 1×2 using reflection high-energy electron diffraction during molecular beam epitaxyApplied Physics Letters, 1986
- The Kinetics of Silicon Deposition on Silicon by Pyrolysis of SilaneJournal of the Electrochemical Society, 1974