BiCMOS circuit technology for a high-speed SRAM

1 February 1988

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits

Vol. 23 (1) , 68-73
https://doi.org/10.1109/4.258

Abstract

BiCMOS circuit technology for a high-speed and large-capacity ECL-compatible static RAM (SRAM) is described. To obtain high-speed and low-power operation, a decoder with a pre-main decode configuration having an ECL-interface circuit and a word driver with BiCMOS inverter are proposed. A BiCMOS multiplexer with a single emitter-follower driver is also proposed. An optimization method for memory cell array configuration is presented that minimizes the total delay time and the total power dissipation of SRAMs. Circuit simulation results show that a 64-kbit ECL-compatible SRAM with an access time of less than 7 ns and a power dissipation of less than 1 W is obtainable.

Keywords

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