Influence of illumination on the grain boundary recombination velocity in silicon
- 15 February 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (4) , 1195-1205
- https://doi.org/10.1063/1.333161
Abstract
The variation with illumination of the grain boundary (GB) barrier height EB and of the effective recombination velocity Seff is calculated by means of a self-consistent procedure which takes into account the bending of the minority carrier quasi-Fermi level in the GB space-charge region and in the GB quasi-neutral region. The GB interface states have been assumed to be uniformly distributed in a half-filled band whose width and position in the band gap can vary. Seff is nearly proportional to exp(EB/kT), only when EB is sufficiently low. For high EB, Seff is limited by the thermal velocity. The influence of the density of interface states and the grain doping concentration has been studied. The experimental results obtained with Silso–Wacker polycrystalline silicon show that the grain boundaries present different behaviors.This publication has 13 references indexed in Scilit:
- Relative influence of grain boundaries and intragrain defects on the photocurrents obtained with bridgman polysiliconSolar Cells, 1983
- Dependence of electronic properties of polysilicon grain size and intragrain defectsSolid-State Electronics, 1983
- Density of states of grain boundaries in siliconSolid State Communications, 1982
- Photocurrent and diffusion lengths at the vicinity of grain boundaries (g.b.) in N and P-type polysilicon. Evaluation of the g.b. recombination velocity)Revue de Physique Appliquée, 1982
- Grain boundary recombination: Theory and experiment in siliconJournal of Applied Physics, 1981
- Effects of grain boundaries in polycrystalline solar cellsApplied Physics Letters, 1980
- Improvement of polycrystalline silicon solar cells with grain-boundary hydrogenation techniquesApplied Physics Letters, 1980
- Grain boundary states and varistor behavior in silicon bicrystalsApplied Physics Letters, 1979
- Electron states associated with the core region of the 60° dislocation in silicon and germaniumPhysica Status Solidi (b), 1978
- Some Predicted Effects of Temperature Gradients on Diffusion in CrystalsPhysical Review B, 1953