Correlation of low-frequency noise and emitter-base reverse-bias stress in epitaxial Si- and SiGe-base bipolar transistors

This publication has 9 references indexed in Scilit:

• A 200 mm SiGe-HBT technology for wireless and mixed-signal applications
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Low-frequency noise in UHV/CVD Si- and SiGe-base bipolar transistors
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Study of RTS noise in degraded submicron polysilicon-emitter bipolar transistors
  Microelectronic Engineering, 1995
• Low-frequency noise in polysilicon emitter bipolar transistors
  IEEE Transactions on Electron Devices, 1995
• Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits
  IEEE Transactions on Electron Devices, 1995
• Re-engineering silicon: Si-Ge heterojunction bipolar technology
  IEEE Spectrum, 1995
• Si/SiGe epitaxial-base transistors. II. Process integration and analog applications
  IEEE Transactions on Electron Devices, 1995
• Deep-level impurity analysis for p-n junctions of a bipolar transistor from low-frequency g-r noise measurements
  Solid-State Electronics, 1989
• Junction degradation in bipolar transistors and the reliability imposed constraints to scaling and design
  IEEE Transactions on Electron Devices, 1988