Study of RTS noise in degraded submicron polysilicon-emitter bipolar transistors

This publication has 9 references indexed in Scilit:

• Study of RTS noise and excess currents in lattice-mismatched InP/InGaAs/InP photodetector arrays
  Solid-State Electronics, 1995
• Annealing of degraded npn-transistors-mechanisms and modeling
  IEEE Transactions on Electron Devices, 1994
• Discrete conductance fluctuations in silicon emitter junctions due to defect clustering and evidence for structural changes by high-energy electron irradiation and annealing
  Journal of Applied Physics, 1992
• Hot-electron-induced degradation and post-stress recovery of bipolar transistor gain and noise characteristics
  IEEE Transactions on Electron Devices, 1992
• An investigation of nonideal base currents in advanced self-aligned 'etched-polysilicon' emitter bipolar transistors
  IEEE Transactions on Electron Devices, 1991
• Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise
  Advances in Physics, 1989
• Junction degradation in bipolar transistors and the reliability imposed constraints to scaling and design
  IEEE Transactions on Electron Devices, 1988
• Avalanche degradation of h_FE
  IEEE Transactions on Electron Devices, 1970
• Physical model for burst noise in semiconductor devices
  Solid-State Electronics, 1970