Tunneling involving defects in LPE In1−xGaxP1−zAsz(x∼0.12, z∼0.26) double-heterojunction lasers

Abstract
Defect‐assisted (’’two‐step’’) tunneling is observed in the IV and dI/dV characteristics of LPE In1−xGaxP1−zAsz double‐heterojunction laser diodes (Jth∼4.7×102 A/cm2, λ∼1.05 μm, 77 °K). The change in conductance (’’turn‐off’’) at zero bias due to resonant‐elastic tunneling, and a related change at 40–60 mV involving acceptor states, are compared with similar data on Zn‐diffused InxGa1−xAs laser diodes, and indicate that the Zn dopant in either type of laser diode is the main source of the defects involved in the two‐step tunneling.