Studies of interdiffusion in GemSin strained layer superlattices
- 1 February 1990
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 19 (2) , 125-129
- https://doi.org/10.1007/bf02651736
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Annealing effects in short period Si-Ge strained layer superlatticesSemiconductor Science and Technology, 1988
- Indirect, quasidirect, and direct optical transitions in the pseudomorphic (44)-monolayer Si-Ge strained-layer superlattice on Si(001)Physical Review B, 1987
- Folded acoustic phonons in Si/strained-layer superlatticesPhysical Review B, 1987
- Kinetics of Rapid Thermal Oxidation of SiliconMRS Proceedings, 1987
- Physics and applications of GexSi1-x/Si strained-layer heterostructuresIEEE Journal of Quantum Electronics, 1986
- Folded acoustic phonons in Si-superlatticesPhysical Review B, 1986
- Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSuperlatticesPhysical Review Letters, 1985
- Pseudomorphic growth of GexSi1−x on silicon by molecular beam epitaxyApplied Physics Letters, 1984
- The Diffusion Coefficient of Germanium in SiliconPhysica Status Solidi (a), 1982
- The diffusion of silicon in germaniumSolid-State Electronics, 1981