Temperature parameter in hydrogen passivation of multicrystalline silicon solar cells
- 30 November 1988
- journal article
- Published by Elsevier in Solar Cells
- Vol. 25 (2) , 109-125
- https://doi.org/10.1016/0379-6787(88)90016-6
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- Influence and passivation of extended crystallographic defects in polycrystalline siliconRevue de Physique Appliquée, 1987
- Passivation of polycrystalline silicon solar cells by low-energy hydrogen ion implantationSolar Cells, 1986
- Compositional microcharacterization of electrically active and chemically passivated silicon grain boundariesJournal of Vacuum Science & Technology A, 1985
- Some problems arising in hydrogen passivation of silicon by ion bombardment techniquesNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Potential improvement of polysilicon solar cells by grain boundary and intragrain diffusion of aluminumJournal of Applied Physics, 1984
- Passivation par l'hydrogène de défauts recombinants dans les photopiles réalisées sur rubans de silicium polycristallin RADRevue de Physique Appliquée, 1984
- Hydrogen passivation of defects in silicon ribbon grown by the edge-defined film-fed growth processApplied Physics Letters, 1983
- Passivation of grain boundaries in siliconJournal of Vacuum Science and Technology, 1982
- Photocurrent and diffusion lengths at the vicinity of grain boundaries (g.b.) in N and P-type polysilicon. Evaluation of the g.b. recombination velocity)Revue de Physique Appliquée, 1982
- Grain boundary recombination: Theory and experiment in siliconJournal of Applied Physics, 1981