Analysis of Snapback in Soi nMosfets and its Use for an Soi Esd Protection Circuit
- 24 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 140-141
- https://doi.org/10.1109/soi.1992.664831
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Modeling of output snapback characteristics in n-channel SOI MOSFETsIEEE Transactions on Electron Devices, 1992
- Dynamic gate coupling of NMOS for efficient output ESD protectionPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1992
- Characterization and modeling of second breakdown in NMOST's for the extraction of ESD-related process and design parametersIEEE Transactions on Electron Devices, 1991
- An analytical model for snapback in n-channel SOI MOSFET'sIEEE Transactions on Electron Devices, 1991