Modeling of output snapback characteristics in n-channel SOI MOSFETs

This publication has 10 references indexed in Scilit:

• An analytical model for snapback in n-channel SOI MOSFET's
  IEEE Transactions on Electron Devices, 1991
• Single-transistor latch in SOI MOSFETs
  IEEE Electron Device Letters, 1988
• Avalanche-induced drain-source breakdown in silicon-on-insulator n-MOSFETs
  IEEE Transactions on Electron Devices, 1988
• A model for the electric field in lightly doped drain structures
  IEEE Transactions on Electron Devices, 1987
• Dependence of channel electric field on device scaling
  IEEE Electron Device Letters, 1985
• A simple method to characterize substrate current in MOSFET's
  IEEE Electron Device Letters, 1984
• The effect of high fields on MOS device and circuit performance
  IEEE Transactions on Electron Devices, 1984
• A simplified model of short-channel MOSFET characteristics in the breakdown mode
  IEEE Transactions on Electron Devices, 1983
• Study of Transistor Switching Circuit Stability in the Avalanche Region
  IEEE Journal of Solid-State Circuits, 1967
• Ionization Rates for Electrons and Holes in Silicon
  Physical Review B, 1958