Compensation in n-type GaAs resulting from nitrogen ion implantation

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Abstract
Nitrogen introduced by ion implantation is shown to strongly compensate n‐type GaAs after annealing. From transport measurements, this compensation behavior is found to be due to a deep acceptor center associated with the nitrogen. Ion‐implanted nitrogen is found to compensate both silicon‐doped and sulfur‐doped n‐type GaAs. A comparison of silicon plus nitrogen co‐implants with silicon plus neon co‐implants shows that the observed compensation effect of implanted nitrogen is not due solely to residual ion‐implantation‐induced lattice damage but rather requires nitrogen to be present. The electrical properties of nitrogen plus silicon co‐implanted layers are found to be qualitatively similar to those resulting from oxygen plus silicon co‐implantation in GaAs.