Interstitial aggregates and a new model for the I1/W optical centre in silicon
- 15 December 1999
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 273-274, 505-508
- https://doi.org/10.1016/s0921-4526(99)00538-4
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Silicon di-interstitial in ion-implanted siliconApplied Physics Letters, 1998
- Uniaxial-stress-induced alignment of the B804 (J-lines) centres in siliconSolid State Communications, 1998
- Oxygen participation in the formation of the photoluminescence W center and the center’s origin in ion-implanted silicon crystalsApplied Physics Letters, 1998
- Extended Si |P[311|P] defectsPhysical Review B, 1997
- Noble-gas-related defects in Si and the origin of the 1018 meV photoluminescence linePhysical Review B, 1997
- Activation energy for the photoluminescence W center in siliconApplied Physics Letters, 1992
- An Atomic Model of Electron-Irradiation-Induced Defects on {113} in SiJapanese Journal of Applied Physics, 1991
- The 1018 meV (W or I1) vibronic band in siliconJournal of Physics C: Solid State Physics, 1987
- Symmetry and Nature of the 1.0186 eV Luminescence Centre in Neutron ‐ Irradiated SiliconPhysica Status Solidi (b), 1981
- Recombination luminescence from ion implanted siliconRadiation Effects, 1976