Oxygen participation in the formation of the photoluminescence W center and the center’s origin in ion-implanted silicon crystals
- 16 March 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (11) , 1347-1349
- https://doi.org/10.1063/1.120990
Abstract
The relationship between the photoluminescence (PL) intensity due to the W (or ) center and the oxygen concentration in implanted silicon crystals was studied. The PL intensity of the W center decreased consistently with increasing oxygen concentration for carbon-implanted samples with a wide range of carbon fluences, while it showed no dependence on the oxygen concentration for samples implanted with elements such as hydrogen, silicon, and heavy metals. Based on these results and considerations of the reactions of intrinsic defects generated by implantation, the origin of the PL W center was attributed to a defect composed of silicon self-interstitials.
Keywords
This publication has 23 references indexed in Scilit:
- Evolution of interstitial- and vacancy-type defects upon thermal annealing in ion-implanted SiApplied Physics Letters, 1997
- Noble-gas-related defects in Si and the origin of the 1018 meV photoluminescence linePhysical Review B, 1997
- Photoluminescence Measurements of Low‐Level Oxygen in Thin Silicon Crystal Using a C‐O Complex Formed Through Carbon ImplantationJournal of the Electrochemical Society, 1996
- The formation of luminescence centers in silicon crystals after electron irradiation and ion implantation at 20 KPhysica Status Solidi (a), 1994
- A Study of Luminescent Centers in Reactive‐Ion‐Etched SiliconJournal of the Electrochemical Society, 1991
- Photoluminescence study of radiative channels in ion-implanted siliconPhysical Review B, 1990
- Reactive-ion- and plasma-etching-induced extended defects in silicon studied with photoluminescenceJournal of Applied Physics, 1990
- Determination of the Conversion Factor for Infrared Measurements of Carbon in SiliconJournal of the Electrochemical Society, 1986
- Symmetry and Nature of the 1.0186 eV Luminescence Centre in Neutron ‐ Irradiated SiliconPhysica Status Solidi (b), 1981
- Ion-induced defects in semiconductorsNuclear Instruments and Methods, 1981